The reborn of kesterite: molecular inks synthesis route shows the pathway for solar cells with efficiency over 15%

The reborn of kesterite: molecular inks synthesis route shows the pathway for solar cells with efficiency over 15%

Edgardo Saucedo

Universitat Politècnica de Catalunya (UPC), Barcelona, Spain.

The synthesis of multinary semiconductors for solar energy conversion applications such as kesterite (Cu2ZnSn(S,Se)4, CZTSSe) is extremely challenging due to the complexity of this type of compounds. Having multiple elements in their structure the formation of secondary phases, punctual or extended detrimental defects, and/or singular interfaces is commonly very problematic. In particular, quaternary kesterite-type compounds are not the exception, and all these detrimental issues explain why during almost 10 years the world record efficiency was unchanged. But, the very recent development of molecular inks route with special precursors, allows the accurate control of single kesterite phase with high crystalline quality. In addition, the use of selective diluted alloying has shown a high potential for minimizing detrimental punctual defects formation, contributing to increase the conversion efficiency record of kesterite based solar cells up to 15% in a short time.

This presentation will be focused first in demonstrating how the molecular inks synthesis route was of key relevance for the control of high quality single phase kesterite, through the modification of the synthesis mechanisms. The relevance of the composition of the ink, the precursor salts, and the interaction between the solvent and the cations in the solution is key for a reliable and reproducible high efficiency kestetite production baseline. Then, diluted alloying/doping strategies will be presented including Cu, Zn and Sn partial substitution with elements such as Ag, Li, Cd or Ge. The positive impact of these cation substitutions will be discussed in regards of their impact on the kesterite quality, as well as on the annihilation of detrimental punctual defects, allowing for new efficiency records at 15% level.

Finally, very recent and innovative interface passivation strategies will be discussed, showing the pathway to increase the record efficiency beyond 20%.